Improved Uniformity of TaO x...

ECS Journal of Solid State Science and Technology 2020 / 04 Vol. 9; Iss. 4

Improved Uniformity of TaO x -Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Li, Chuang, Wang, Fang, Zhang, Jingwei, She, Yu, Zhang, Zhenzhong, Liu, Lifeng, Liu, Qi, Hao, Yaowu, Zhang, Kailiang
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Volume:
9
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2162-8777/ab85be
Date:
April, 2020
File:
PDF, 1.32 MB
2020
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