First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel
Li, Weiyi, Pasayat, Shubhra, Guidry, Matthew, Romanczyk, Brian, Zheng, Xun, Gupta, Chirag, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh KJournal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab860a
Date:
April, 2020
File:
PDF, 3.19 MB
2020
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