A High Mobility of Up to 13 cm²V −1...

IEEE Electron Device Letters 2020 / 5 Vol. 41; Iss. 5

A High Mobility of Up to 13 cm²V −1 s −1 in Dinaphttho-Thieno-Thiophene Single-Crystal Field-Effect Transistors via Self-Assembled Monolayer Selection

Zhou, Shujun, Tong, Yanhong, Li, Hanbing, Zhao, Xiaoli, Tang, Qingxin, Liu, Yichun
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Volume:
41
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2020.2983056
Date:
May, 2020
File:
PDF, 1.06 MB
2020
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