Tunneling oxide engineering for improving retention in...

  • Main
  • 2020 / 03
  • Tunneling oxide engineering for improving retention in...
Japanese Journal of Applied Physics 2020 / 03

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TAHOAOS (TaN/Al2O3/HfO2/ SiO2/Al2O3/SiO2/Si) structure

Song, Young Suh, Jang, Taejin, Min, Kyung Kyu, Baek, Myung-Hyun, Yu, Junsu, Kim, Yeonwoo, Lee, Jong-Ho, Park, Byung-Gook
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab8275
Date:
March, 2020
File:
PDF, 1.45 MB
2020
Conversion to is in progress
Conversion to is failed