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Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application
Mohit,, Haga, Ken-ichi, Tokumitsu, EisukeVolume:
59
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab86de
Date:
July, 2020
File:
PDF, 964 KB
2020