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The Origin and Influence of Compensatory Current in AlGaN/GaN Type High Electron Mobility Transistor Heterostructures with Two Conducting Channels on the Hall Measurements
Glinkowski, Mateusz, Paszkiewicz, Bogdan, WoÅko, Mateusz, Paszkiewicz, ReginaVolume:
217
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900661
Date:
May, 2020
File:
PDF, 1.15 MB
2020