Subthermionic field-effect transistors with sub-5 nm gate...

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Science Bulletin 2020 / 4

Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Wang, Feng, Liu, Jia, Huang, Wenhao, Cheng, Ruiqing, Yin, Lei, Wang, Junjun, Sendeku, Marshet Getaye, Zhang, Yu, Zhan, Xueying, Shan, Chongxin, Wang, Zhenxing, He, Jun
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Journal:
Science Bulletin
DOI:
10.1016/j.scib.2020.04.019
Date:
April, 2020
File:
PDF, 2.75 MB
2020
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