Characterization of 4H- and 6H-Like Stacking Faults in...

Materials 2020 / 04 Vol. 13; Iss. 8

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Scuderi, Viviana, Calabretta, Cristiano, Anzalone, Ruggero, Mauceri, Marco, La Via, Francesco
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
13
Journal:
Materials
DOI:
10.3390/ma13081837
Date:
April, 2020
File:
PDF, 1.98 MB
2020
Conversion to is in progress
Conversion to is failed