Comparative study of gallium nitride and silicon carbide MOSFETs as power switching applications under cryogenic conditions
Abd El-Azeem, S.M., El-Ghanam, S.M.Volume:
107
Journal:
Cryogenics
DOI:
10.1016/j.cryogenics.2020.103071
Date:
April, 2020
File:
PDF, 1.73 MB
2020