Temperature-dependent stacking fault energies of 4H-SiC: A...

Journal of Applied Physics 2020 / 03 Vol. 127; Iss. 12

Temperature-dependent stacking fault energies of 4H-SiC: A first-principles study

Sakakima, Hiroki, Takamoto, So, Hatano, Asuka, Izumi, Satoshi
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Volume:
127
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5141029
Date:
March, 2020
File:
PDF, 2.50 MB
2020
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