Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2020 / 05 Vol. 38; Iss. 3
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Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
S, Niranjan, Guiney, Ivor, Humphreys, Colin J., Sen, Prosenjit, Muralidharan, Rangarajan, Nath, Digbijoy N.Volume:
38
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5144509
Date:
May, 2020
File:
PDF, 3.36 MB
2020