Rectified Tunnel Magnetoresistance Device with High On/Off...

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IEEE Electron Device Letters 2020

Rectified Tunnel Magnetoresistance Device with High On/Off Ratio for In-Memory Computing

Zhang, Kun, Cao, Kaihua, Zhang, Yue, Huang, Zhe, Cai, Wenlong, Wang, Jinkai, Nan, Jiang, Wang, Guanda, Zheng, Zhenyi, Chen, Lei, Zhang, Zhizhong, Zhang, Youguang, Yan, Shishen, Zhao, Weisheng
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2987211
File:
PDF, 1.08 MB
2020
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