High mobility approaching the intrinsic limit in Ta-doped...

Scientific Reports 2020 / 12 Vol. 10; Iss. 1

High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates

Fukumoto, Michitaka, Nakao, Shoichiro, Shigematsu, Kei, Ogawa, Daisuke, Morikawa, Kazuo, Hirose, Yasushi, Hasegawa, Tetsuya
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Volume:
10
Journal:
Scientific Reports
DOI:
10.1038/s41598-020-63800-3
Date:
December, 2020
File:
PDF, 2.63 MB
2020
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