Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al 2 O 3
Hussain, Jibran, Abbasi, Haris Naeem, Wang, Wei, Wang, Yan-Feng, Wang, Ruozheng, Wang, Hong-XingVolume:
10
Journal:
AIP Advances
DOI:
10.1063/5.0002120
Date:
March, 2020
File:
PDF, 2.17 MB
2020