Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique
Zhu, Jiejie, Zhang, Yingcong, Ma, Xiaohua, Liu, Siyu, Jing, Siqi, Zhu, Qing, Mi, Minhan, Hou, Bin, Yang, Ling, Uren, Michael, Kuball, Martin, Hao, YueJournal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab8356
Date:
March, 2020
File:
PDF, 972 KB
2020