A 4- μ m Diameter SPAD Using...

IEEE Transactions on Electron Devices 2020 / 5 Vol. 67; Iss. 5

A 4- μ m Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65-nm CMOS

Lu, Xin, Law, Man-Kay, Jiang, Yang, Zhao, Xiaojin, Mak, Pui-In, Martins, Rui P.
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2982701
Date:
May, 2020
File:
PDF, 195 KB
2020
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