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[IEEE 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) - Rourkela, India (2019.12.16-2019.12.18)] 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) - Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in Heterostructure p-MOSFET
Chowdhury, Joy, Deyasi, Arpan D, Sarkar, Angsuman, Mahapatra, KamalakantaYear:
2019
DOI:
10.1109/ises47678.2019.00092
File:
PDF, 378 KB
2019