Editors’ Choice—Electrical Properties and Deep Traps...

ECS Journal of Solid State Science and Technology 2020 / 04 Vol. 9; Iss. 4

Editors’ Choice—Electrical Properties and Deep Traps in α -Ga 2 O 3 :Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy

Polyakov, A. Y., Nikolaev, V. I., Stepanov, S. I., Pechnikov, A. I., Yakimov, E. B., Smirnov, N. B., Shchemerov, I. V., Vasilev, A. A., Kochkova, A. I., Chernykh, A.V., Pearton, S. J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
9
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2162-8777/ab89bb
Date:
April, 2020
File:
PDF, 1.31 MB
2020
Conversion to is in progress
Conversion to is failed