Modeling of carrier scattering in MOS inversion layers with...

Japanese Journal of Applied Physics 2020 / 03 Vol. 59; Iss. 3

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Tanaka, Hajime, Mori, Nobuya
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Volume:
59
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab7271
Date:
March, 2020
File:
PDF, 1.31 MB
2020
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