Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang,Volume:
10
Journal:
Nanomaterials
DOI:
10.3390/nano10040793
Date:
April, 2020
File:
PDF, 3.20 MB
2020