Enhancement of electron transport properties of...

Applied Physics Express 2020 / 06 Vol. 13; Iss. 6

Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer

Kao, Min-Lu, Ha, Minh Thien Huu, Lin, Yuan, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
13
Journal:
Applied Physics Express
DOI:
10.35848/1882-0786/ab8b51
Date:
June, 2020
File:
PDF, 611 KB
2020
Conversion to is in progress
Conversion to is failed