HRXRD study of the effect of a nanoporous silicon layer on...

Results in Physics 2020 / 03 Vol. 16

HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

Seredin, P.V., Leiste, H., Lenshin, A.S., Mizerov, A.M.
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Volume:
16
Journal:
Results in Physics
DOI:
10.1016/j.rinp.2019.102919
Date:
March, 2020
File:
PDF, 356 KB
2020
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