THz behavior originates from different arrangements of...

THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

Park, Kwangwook, Min, Jung-Wook, Subedi, Ram Chandra, Shakfa, Mohammad Khaled, Davaasuren, Bambar, Ng, Tien Khee, Ooi, Boon S., Kang, Chul, Kim, Jongmin
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Volume:
522
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2020.146422
Date:
August, 2020
File:
PDF, 7.39 MB
2020
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