Comparative study on performance of AlGaN/GaN MS-HEMTs with...

Solid-State Electronics 2020 / 08 Vol. 170

Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation

Cheng, Kai-Yuan, Wu, Shang-Chi, Yu, Chia-Jui, Wang, Tong-Wen, Liao, Jyun-Hao, Wu, Meng-Chyi
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Volume:
170
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2020.107824
Date:
August, 2020
File:
PDF, 1.27 MB
2020
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