Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates
Yurasov, D. V., Novikov, A. V., Baidakova, N. A., Aleshkin, V. Ya., Bushuykin, P. A., Andreev, B. A., Yunin, P. A., Drozdov, M. N., Yablonskiy, A. N., Dubinov, A. A., Krasilnik, Z. F.Volume:
127
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5140072
Date:
April, 2020
File:
PDF, 1.81 MB
2020