Gate-Induced Drain Leakage in Negative Capacitance FinFETs

IEEE Transactions on Electron Devices 2020 / 3 Vol. 67; Iss. 3

Gate-Induced Drain Leakage in Negative Capacitance FinFETs

Gaidhane, Amol D., Pahwa, Girish, Verma, Amit, Chauhan, Yogesh Singh
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2967463
Date:
March, 2020
File:
PDF, 1.64 MB
2020
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