Controllable Epitaxial Growth of MoSe 2...

ACS Applied Materials & Interfaces 2020 / 05

Controllable Epitaxial Growth of MoSe 2 Bilayers with Different Stacking Orders by Reverse-Flow Chemical Vapor Deposition

Peng, Gang, Yang, Xi, Wang, Siyuan, Zhang, Jianyu, Qi, Gongjin, Zhang, Sen, Liu, Ken, Zhu, Zhi Hong, Li, Zheng, Wang, Guang, Zhu, Mengjian, Qin, Shiqiao
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Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.0c04411
Date:
May, 2020
File:
PDF, 1.01 MB
2020
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