Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional
Zhou, Wenhan, Zhang, Shengli, Guo, Shiying, Wang, Yangyang, Lu, Jing, Ming, Xing, Li, Zhi, Qu, Hengze, Zeng, HaiboVolume:
13
Journal:
Physical Review Applied
DOI:
10.1103/PhysRevApplied.13.044066
Date:
April, 2020
File:
PDF, 3.61 MB
2020