Highly Enhanced Inductive Current Sustaining Capability and...

IEEE Electron Device Letters 2020 / 3 Vol. 41; Iss. 3

Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

Nie, Kai-Wen, Xu, Wei-Zong, Ren, Fang-Fang, Zhou, Dong, Pan, Dan-Feng, Ye, Jian-Dong, Chen, Dun-Jun, Zhang, Rong, Zheng, You-Dou, Lu, Hai
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Volume:
41
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2970552
Date:
March, 2020
File:
PDF, 965 KB
2020
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