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[IEEE 2020 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2020.2.16-2020.2.20)] 2020 IEEE International Solid- State Circuits Conference - (ISSCC) - 13.1 A 1Tb 4b/cell NAND Flash Memory with t PROG =2ms, t R =110µs and 1.2Gb/s High-Speed IO Rate
Kim, Doo-Hyun, Kim, Hyunggon, Yun, Sungwon, Song, Youngsun, Kim, Jisu, Joe, Sung-Min, Kang, Kyung-Hwa, Jang, Joonsuc, Yoon, Hyun-Jun, Lee, Kanabin, Kim, Minseok, Kwon, Joonsoo, Jo, Jonghoo, Park, SehwYear:
2020
DOI:
10.1109/ISSCC19947.2020.9063053
File:
PDF, 416 KB
2020