Etching of Si 3 N...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2020 / 05 Vol. 38; Iss. 3

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

Li, Chen, Hofmann, Thorsten, Edinger, Klaus, Godyak, Valery, Oehrlein, Gottlieb S.
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Volume:
38
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5143538
Date:
May, 2020
File:
PDF, 3.02 MB
2020
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