Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2020 / 05 Vol. 38; Iss. 3
Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
Scott Katzer, Douglas, Hardy, Matthew T., Nepal, Neeraj, Downey, Brian P., Jin, Eric N., Meyer, David J.Volume:
38
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/6.0000063
Date:
May, 2020
File:
PDF, 1.93 MB
2020