Two Dimensional analytical modelling of drain current...

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Semiconductor Science and Technology 2020 / 04

Two Dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by electric field

Gupta, Shradha, Kaushik, Janesh K, Gupta, Ankur, Kumar, Vikram, Balakrishnan, V R
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Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab8e62
Date:
April, 2020
File:
PDF, 1.54 MB
2020
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