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Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation
Uehara, Daisuke, Kikuchi, Moe, Ma, Bei, Miyake, Hideto, Ishitani, YoshihiroVolume:
13
Journal:
Applied Physics Express
DOI:
10.35848/1882-0786/ab8c1c
Date:
June, 2020
File:
PDF, 2.48 MB
2020