Effect of Gate Structure on the Trapping Behavior of GaN...

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IEEE Electron Device Letters 2020

Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs

Im, Ki-Sik, An, Sung Jin, Theodorou, Christoforos G., Ghibaudo, Girard, Cristoloveanu, Sorin, Lee, Jung-Hee
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2991164
File:
PDF, 969 KB
2020
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