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Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures
Sameshima, Toshiyuki, Nagao, Tomokazu, Sekiguchi, Erika, Hasumi, MasahikoVolume:
8
Year:
2020
Journal:
IEEE Access
DOI:
10.1109/access.2020.2987825
File:
PDF, 4.30 MB
2020