Erratum: âReduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substratesâ
Chiu, Ching-Hsueh, Lin, Da-Wei, Lin, Chien-Chung, Li, Zhen-Yu, Chang, Wei-Ting, Hsu, Hung-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Liao, Wei-Tsai, Tanikawa, Tomoyuki, Honda, Yoshio, YamVolume:
4
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.039201
Date:
March, 2011
File:
PDF, 43 KB
2011