Analysis of the substantial reduction of strain-induced...

Applied Physics Express 2016 / 01 Vol. 9; Iss. 1

Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs

Choi, Sujin, Sun, Wookyung, Shin, Hyungsoon
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Volume:
9
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.014201
Date:
January, 2016
File:
PDF, 1.76 MB
2016
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