Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the PooleâFrenkel Effect
Shiryaev, A. A., Vorotyntsev, V. M., Shobolov, E. L.Volume:
54
Journal:
Semiconductors
DOI:
10.1134/S1063782620050127
Date:
May, 2020
File:
PDF, 425 KB
2020