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Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD
Khan, Ruby, Narang, Kapil, Padmavati, M.V.G., Tyagi, Renu, Bag, Rajesh K., Riaz, UfanaJournal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2020.04.154
Date:
May, 2020
File:
PDF, 1.86 MB
2020