Impact of thickness of GaN buffer layer on properties of...

Science China Technological Sciences 2010 / 02 Vol. 53; Iss. 2

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

ChaoMin Wu, JingZhi Shang, BaoPing Zhang, JiangYong Zhang, JinZhong Yu, QiMing Wang
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Volume:
53
Language:
english
Pages:
4
DOI:
10.1007/s11431-010-0037-0
Date:
February, 2010
File:
PDF, 652 KB
english, 2010
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