High nitrogen pressure solution (HNPS) growth of GaN on 2...

Science China Technological Sciences 2011 / 01 Vol. 54; Iss. 1

High nitrogen pressure solution (HNPS) growth of GaN on 2 inch free standing GaN substrates

M. Boćkowski, I. Grzegory, B. Łucznik, T. Sochacki, M. Kryśko, G. Kamler, S. Porowski
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Volume:
54
Language:
english
Pages:
5
DOI:
10.1007/s11431-010-4181-3
Date:
January, 2011
File:
PDF, 721 KB
english, 2011
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