An ultralow loss 4H-SiC double trenches MOSFET with...

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Semiconductor Science and Technology 2020 / 05

An ultralow loss 4H-SiC double trenches MOSFET with integrated hetero-junction diodes and split gate

Song, Xu, Luo, Xiaorong, Zhang, Ke, Wei, Jie, Su, Wei, Fang, Jian, Yang, Fei
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Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab92d0
Date:
May, 2020
File:
PDF, 12.27 MB
2020
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