![](/img/cover-not-exists.png)
Demonstration of GaN/LiNbO 3 Hybrid Wafer Using Room-Temperature Surface Activated Bonding
Takigawa, Ryo, Matsumae, Takashi, Yamamoto, Michitaka, Higurashi, Eiji, Asano, Tanemasa, Kanaya, HaruichiVolume:
9
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2162-8777/ab8369
Date:
April, 2020
File:
PDF, 1.11 MB
2020