The passivation mechanism of nitrogen ions on the gate...

SCIENCE CHINA Physics, Mechanics & Astronomy 2011 / 12 Vol. 54; Iss. 12

The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

ZhiWei Bi, Yue Hao, Qian Feng, TingTing Jiang, YanRong Cao, JinCheng Zhang, Wei Mao, Ling Lü, Yue Zhang
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Volume:
54
Language:
english
Pages:
4
DOI:
10.1007/s11433-011-4539-y
Date:
December, 2011
File:
PDF, 395 KB
english, 2011
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