Influence of GaN/sapphire contact area on bowing of GaN...

Japanese Journal of Applied Physics 2020 / 02 Vol. 59; Iss. 2

Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process

Yamada, Takumi, Imanishi, Masayuki, Murakami, Kosuke, Nakamura, Kosuke, Yoshimura, Masashi, Mori, Yusuke
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Volume:
59
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab699b
Date:
February, 2020
File:
PDF, 540 KB
2020
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