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Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process
Yamada, Takumi, Imanishi, Masayuki, Murakami, Kosuke, Nakamura, Kosuke, Yoshimura, Masashi, Mori, YusukeVolume:
59
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab699b
Date:
February, 2020
File:
PDF, 540 KB
2020