Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates
Koyama, Akihiro, Sometani, Mitsuru, Takenaka, Kensuke, Nakayama, Koji, Miyasaka, Akira, Kojima, Kazutoshi, Eto, Kazuma, Kato, Tomohisa, Senzaki, Junji, Yonezawa, Yoshiyuki, Okumura, HajimeVolume:
59
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab6b7d
Date:
April, 2020
File:
PDF, 1.24 MB
2020