Improving mobility of silicon metal-oxide–semiconductor...

EPL (Europhysics Letters) 2020 / 05 Vol. 130; Iss. 2

Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing

Wang, Ke, Li, Hai-Ou, Luo, Gang, Zhang, Xin, Jing, Fang-Ming, Hu, Rui-Zi, Zhou, Yuan, Liu, He, Wang, Gui-Lei, Cao, Gang, Jiang, Hong-Wen, Guo, Guo-Ping
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Volume:
130
Journal:
EPL (Europhysics Letters)
DOI:
10.1209/0295-5075/130/27001
Date:
May, 2020
File:
PDF, 1.37 MB
2020
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