200 nm gate-length GaAs-based MHEMT devices by electron...

Chinese Science Bulletin 2008 / 11 Vol. 53; Iss. 22

200 nm gate-length GaAs-based MHEMT devices by electron beam lithography

JingBo Xu, HaiYing Zhang, WenXin Wang, Liang Liu, Ming Li, XiaoJun Fu, JieBin Niu, TianChun Ye
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Volume:
53
Language:
english
Pages:
5
DOI:
10.1007/s11434-008-0497-9
Date:
November, 2008
File:
PDF, 685 KB
english, 2008
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