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Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications

Godfrey, D., Nirmal, D., Godwinraj, D., Arivazhagan, L., MohanKumar, N., Tzou, Jerry, Yeh, Wen-Kuan
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Journal:
Silicon
DOI:
10.1007/s12633-020-00503-4
Date:
May, 2020
File:
PDF, 1.84 MB
2020
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